, o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. i r 413 (silicon) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 to-3 high -voltage npn silicon transistors designed for medium-to-high- voltage inverters, converters, reg- ulators and switching circuits. colltctor connected to cmc i pin i base 1coimctm maximum ratings rating collector-emitter voltage collector-base voltage emitter- base voltage collector current ? continuous base current total device dissipation 9 t_ - 25"c derate above 25*c operation junction temperature range storage temperature range symbol vcex vcb veb s 'b pd tj ts* 400 400" 10 2.0 125 1. 1 -65 to +150 -65 to +200 unit vdc vdc vdc adc ada watts w/-c ?c "c thermal characteristics characteristic thermal resistance, junction to case symbol ejc max 1.0 unit c/w electrical characteristics 5.0 vdc) collector-emitter saturation voltage ni (ic . 0. 5 adc, ig . 0. 05 adc) base-emitter saturation voltage i'l (ic > 0. 5 adc, 1b - 0. 05 adc) bf8 vce(sat) vbe(sat) 20 15 - ? 80 ? 0.8 1.25 vdc vdc dynamic characteristics current-gain ? bandwidth product (ic =. 200 madc, vce - lovdc, f . 1. 0 mhz) to3 [?.875 -j | max. .135 max. * seatingp .525 r max.
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